Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene nanoribbon-silicon interfaces
نویسندگان
چکیده
carbon nanotube/graphene nanoribbon-silicon interfaces Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, and Xiulin Ruan School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA School of Electrical Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson Air Force Base, Dayton, Ohio 45433, USA
منابع مشابه
Molecular dynamics simulations of carbon nanotube/silicon interfacial thermal conductance.
Using molecular dynamics simulations with Tersoff reactive many-body potential for Si-Si, Si-C, and C-C interactions, we have calculated the thermal conductance at the interfaces between carbon nanotube (CNT) and silicon at different applied pressures. The interfaces are formed by axially compressing and indenting capped or uncapped CNTs against 2 x 1 reconstructed Si surfaces. The results show...
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